High-performance Surface Channel In-rich In0.75Ga0.25As MOSFETs with ALD High-k as Gate Dielectric
نویسندگان
چکیده
High-performance inversion-type enhancement-mode nchannel MOSFETs on In-rich In0.75Ga0.25As using ALD Al2O3 as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0x10 cm/s at drain voltage of 2.0 V are achieved at 0.75μm gate length devices. The device performance of In-rich InGaAs NMOSFETs with different indium contents, In0.53Ga0.47As, In0.65Ga0.35As and In0.75Ga0.25As, are systematically studied.
منابع مشابه
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تاریخ انتشار 2008